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UT108N03 - N-CHANNEL POWER MOSFET

General Description

As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.

Key Features

  • RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A.
  • Low Capacitance.
  • Optimized Gate Charge.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • SYMBOL 2.Drain 1 TO-220 1 TO-252 1 TO-251 1 TO-252D 1.Gate 3.Source.

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UNISONIC TECHNOLOGIES CO., LTD UT108N03 30V, 108A N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.  FEATURES * RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified  SYMBOL 2.Drain 1 TO-220 1 TO-252 1 TO-251 1 TO-252D 1.Gate 3.