UT108N03
Description
As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.
Key Features
- * RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified
