UT108N03 Overview
As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.
UT108N03 Key Features
- RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A
- Low Capacitance
- Optimized Gate Charge
- Fast Switching Capability
- Avalanche Energy Specified
- SYMBOL
- ORDERING INFORMATION
- MARKING
